Fast Near-Interface Traps in 4H-SiC MOS Capacitors Measured by an Integrated-Charge Method

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-channel MOSFETs

4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage measurements and by numerical simulation. To describe the observed electrical characteristics of the SiC MOSFETs, Near-Interface Traps (NIT) and mobility degradation models were included in the simulation. The main finding of the simulation is that two models for the NIT states in the upper part...

Energy Position of the Active Near-Interface Traps in Metal–Oxide– Semiconductor Field-Effect Transistors on 4H–SiC

Relaxation effects in MOS devices due to tunnel exchange with near-interface oxide traps

Transif Jrs and capacitors in reany types of analog MOS circuits such as chargeredistribution AID converters, switched-capacitor filters and sample-and-holds, are routinely subjected to momentary large-signal stress conditions during the course of their normal operation.. During these transients, charge can be captured by oxide traps close to the Si-Si0 2 interface by tunneling. When the stress...

Electronic structure and charge transfer in 3C- and 4H-SiC

We utilized a local density functional potential, the linear combination of atomic orbital (LCAO) method, and the BZW procedure to study the electronic structure of 3Cand 4H-SiC. We present the calculated energy bands, band-gaps, effective masses of n-type carriers, and critical point transition energies. There is good agreement between the calculated electronic properties and experimental resu...

High Concentration of Interface Traps in MOS Transistor Modeling

Steady-state recombination-generation-trapping of holes and electrons at one-electron neutral traps (charge states 0 and −1) located at the SiO2/Si interface is employed to investigate the effects of high concentration of interface traps on the recombination dc base-terminal current vs gate-voltage (R-DCIV or IB-VGB) and gate capacitance vs gate-voltage (CV or Cgb-VGB) properties of inversion n...